FW217 no. a0364-1/4 sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan 32406pa ms im tb-00001459 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. FW217 n-channel silicon mosfet general-purpose switching device applications features ? motor drive applications. ? 4v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 35 v gate-to-source voltage v gss 20 v drain current (dc) i d 6a drain current (pw 10s) i d duty cycle 1% 6.3 a drain current (pw 10 m s) i dp duty cycle 1% 24 a allowable power dissipation p d mounted on a ceramic board (2000mm 2 5 0.8mm) 1unit, pw 10s 1.8 w total dissipation p t mounted on a ceramic board (2000mm 2 5 0.8mm), pw 10s 2.2 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 35 v zero-gate voltage drain current i dss v ds =35v, v gs =0v 1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0v 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.5 2.5 v forward transfer admittance ? yfs ? v ds =10v, i d =6a 4.0 6.6 s static drain-to-source on-state resistance r ds (on)1 i d =6a, v gs =10v 33 44 m w r ds (on)2 i d =3a, v gs =4v 65 91 m w input capacitance ciss v ds =10v, f=1mhz 630 pf output capacitance coss v ds =10v, f=1mhz 120 pf reverse transfer capacitance crss v ds =10v, f=1mhz 80 pf turn-on delay time t d (on) see specified test circuit. 12 ns rise time t r see specified test circuit. 85 ns turn-off delay time t d (off) see specified test circuit. 42 ns fall time t f see specified test circuit. 42 ns marking : w217 continued on next page. ordering number : ena0364
FW217 no. a0364-2/4 pw=10 m s d.c. 1% p. g 50 w g s d i d =6a r l =2.5 w v dd =15v v out FW217 v in 10v 0v v in 14 5 8 5.0 4.4 6.0 0.3 1.5 1.8 max 0.1 0.595 1.27 0.2 0.43 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : sop8 i d -- v ds i d -- v gs gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v drain current, i d -- a r ds (on) -- v gs r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w gate-to-source voltage, v gs -- v ambient temperature, ta -- c 1 2 3 4 5 6 7 8 9 0 1 2 3 5 4 6 0 0 0.4 0.5 0.7 0.9 0.8 1.0 0.2 0.1 0.3 0.6 v gs =2.5v it10853 0123456 it10854 10.0v 3.0v 4.0v v ds =10v ta=25 c 75 c --25 c 4.5v 6.0v 8.0v --60 --40 --20 0 20 40 60 80 100 120 160 140 0246810121416 it10855 0 10 70 20 30 40 50 60 80 90 100 110 120 130 140 0 10 70 20 30 40 50 60 80 90 100 110 it10856 ta=25 c i d =3a, v gs =4v i d =3a 6a i d =6a, v gs =10v continued from preceding page. ratings parameter symbol conditions min typ max unit total gate charge qg v ds =10v, v gs =10v, i d =6a 12 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =6a 2.5 nc gate-to-drain miller charge qgd v ds =10v, v gs =10v, i d =6a 1.8 nc diode forward voltage v sd i s =6a, v gs =0v 0.87 1.2 v package dimensions switching time test circuit unit : mm 7005-003
FW217 no. a0364-3/4 it10861 0 2 4 6 8 10 1 3 5 7 9 02 1346 513 78 10 91112 0.01 0.1 23 57 23 57 1.0 23 57 10 23 57 0.01 0.1 2 7 5 3 2 1.0 2 7 5 3 it10862 v ds =10v i d =6a 1ms 10ms 100ms dc operation i dp =24a 10 m s i d =6a operation in this area is limited by r ds (on). t f 100 7 5 2 2 3 1000 7 5 2 3 0.01 2 7 5 3 2 0.1 7 5 3 2 7 5 3 1.0 10 t d (on) t d (off) t r it10859 it10857 0.01 23 57 23 57 0.1 1.0 23 57 10 0 5 10 15 20 25 30 35 7 2 7 5 3 2 5 3 1.0 0.1 10 v ds =10v ta= --25 c it10858 0 0.2 0.4 0.6 1.0 0.8 1.2 v gs =0v --25 c 25 c ta=75 c f=1mhz ciss coss crss it10860 v dd =15v v gs =10v 75 c 25 c 7 5 3 7 5 3 2 100 10 0.1 23 57 1.0 23 57 10 10s 10 2 7 5 5 3 3 0 20 40 60 80 100 120 140 160 0 0.5 1.0 2.5 2.0 1.5 1.8 2.2 it10863 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 2.0 1.8 0 0.4 0.2 0.6 0.8 2.0 1.8 1.4 1.0 1.2 1.6 it10864 v gs -- qg a s o sw time -- i d ciss, coss, crss -- v ds ? y fs ? -- i d i s -- v sd ta=25 c single pulse mounted on a ceramic board (2000mm 2 5 0.8mm) total gate charge, qg -- nc gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a drain current, i d -- a forward transfer admittance, ? y fs ? -- s drain current, i d -- a switching time, sw time -- ns drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v source current, i s -- a p d -- ta 1unit p d (fet1) -- p d (fet2) total dissipation mounted on a ceramic board (2000mm 2 5 0.8mm), pw 10s ambient temperature, ta -- c allowable power dissipation, p d -- w mounted on a ceramic board (2000mm 2 5 0.8mm), pw 10s allowable power dissipation (fet1), p d -- w allowable power dissipation (fet2), p d -- w
FW217 no. a0364-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of march, 2006. specifications and information herein are subject to change without notice. ps note on usage : since the FW217 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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